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PD - 95455
IRLIZ34NPBF
Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET(R) Power MOSFET
D
VDSS = 55V RDS(on) = 0.035
G S
ID = 22A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLP AK
Absolute Maximum Ratings
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Max.
22 15 110 37 0.24 16 110 16 3.7 5.0 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Min.

Typ.

Max.
4.1 65
Units
C/W 6/23/04
IRLIZ34NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Min. 55 1.0 11
Typ. 0.065 8.9 100 29 21
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.035 VGS = 10V, ID = 12A 0.046 VGS = 5.0V, ID = 12A 0.060 VGS = 4.0V, ID = 10A 2.0 V VDS = V GS, ID = 250A S VDS = 25V, ID = 16A 25 VDS = 55V, V GS = 0V A 250 VDS = 44V, V GS = 0V, TJ = 150C 100 VGS = 16V nA -100 VGS = -16V 25 ID = 16A 5.2 nC VDS = 44V 14 VGS = 5.0V, See Fig. 6 and 13 VDD = 28V ID = 16A ns RG = 6.5, VGS = 5.0V RD = 1.8, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH from package 7.5 and center of die contact 880 VGS = 0V 220 pF VDS = 25V 94 = 1.0MHz, See Fig. 5 12 = 1.0MHz Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V TJ = 25C, IF = 16A di/dt = 100A/s
D
G S
Source-Drain Ratings and Characteristics
Min. Typ. Max. Units 76 190 22 110 1.3 110 290 V ns nC A IS
I SM
D
G S
VSD t rr Q rr
Notes:
Repetitive rating; pulse width limited by
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRLZ34N data and test conditions
max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 610H RG = 25, IAS = 16A. (See Figure 12) ISD 16A, di/dt 270A/s, VDD V(BR)DSS, TJ 175C
IRLIZ34NPBF
10000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.0V TOP
10000
I D , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
1000
1000
100
100
VGS 7.50V 5.00V 4.00V 3.50V 3.00V 2.75V 2.50V BOTTOM 2.25V TOP
10
10
1
1
2.0V
0.1
0.1
0.01
2.0V 20s PULSE WIDTH TJ = 25C A
1 10 100
0.01
0.001 0.1
0.001 0.1
20s PULSE WIDTH TJ = 175C
1 10
100
A
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
I D , Drain-to-Source Current (A)
TJ = 25C
100
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 27A
2.5
TJ = 175C
10
2.0
1.5
1
1.0
0.1
0.5
0.01 2 3 4 5 6
V DS = 25V 20s PULSE WIDTH
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLIZ34NPBF
1400
1200
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = Cds + C gd
15
I D = 16A V DS = 44V V DS = 28V
12
C, Capacitance (pF)
1000
800
9
C oss
600
6
400
Crss
200
3
0 1 10 100
A
0 0 4 8 12 16
FOR TEST CIRCUIT SEE FIGURE 13
20 24 28 32
A
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
I D , Drain Current (A)
100
100 10s
TJ = 175C TJ = 25C
10
100s 10 1ms
1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VGS = 0V
1.8
A
1 1
TC = 25C TJ = 175C Single Pulse
10
10ms 100
2.0
A
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLIZ34NPBF
25
VDS
20
RD
V GS RG
ID , Drain Current (A)
D.U.T.
+
-V DD
15
5.0V
10
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0
25
50
TC , Case Temperature ( C)
75
100
125
150
175
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRLIZ34NPBF
VDS
EAS , Single Pulse Avalanche Energy (mJ)
L D.U.T.
250
TOP
200
BOTTOM
ID 6.6A 11A 16A
RG
+
V - DD
5.0 V
IAS tp
0.01
150
100
Fig 12a. Unclamped Inductive Test Circuit
50
V(BR)DSS tp VDD VDS
0
VDD = 25V
25 50 75 100 125 150
175
A
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRLIZ34NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRLIZ34NPBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L OT CODE 3 432 AS S E M B L E D O N W W 2 4 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " IN T E R N AT IO N AL R E CT IF IE R L OGO AS S E M B L Y L OT CODE P AR T N U M B E R
IR F I8 40 G 924 K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
D AT E C O D E Y E AR 9 = 1 9 9 9 WE E K 24 L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/04

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